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MRF421

Tyco Electronics
Part Number MRF421
Manufacturer Tyco Electronics
Description The RF Line NPN Silicon RF Power Transistor
Published Sep 20, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed pri...
Datasheet PDF File MRF421 PDF File

MRF421
MRF421

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.
0 to 30 MHz.
• Specified 12.
5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MRF421 100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211–11, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 20 45 3.
0 20 30 290 1.
66 –65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 20 45 45 3.
0 — — — — — — — — — — 10 Vdc Vdc Vdc Vdc mAdc (continued) REV 1 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.
) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.
0 Adc, VCE = 5.
0 Vdc) hFE 10 70 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.
5 Vdc, IE = 0, f = 1.
0 MHz) Cob — 550 800 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 12.
5 Vdc, Pout = 100 W, IC(max) = 10 Adc, ICQ = 150 mAdc, f = 30, 30.
001 MHz) Collector Efficiency (VCC = 12.
5 Vdc, Pout = 100 W, I...


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