BUK9606-55A
N-channel TrenchMOS logic level FET
Rev.
04 — 31 May 2010
Product data sheet
1.
Product profile
1.
1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.
3 Applications
12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and s...