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BUK9606-55A

NXP Semiconductors
Part Number BUK9606-55A
Manufacturer NXP Semiconductors
Description TrenchMOS logic level FET
Published Jul 11, 2010
Detailed Description www.DataSheet4U.com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev. 03 — 23 July 2001 Product dat...
Datasheet PDF File BUK9606-55A PDF File

BUK9606-55A
BUK9606-55A

Overview
www.
DataSheet4U.
com BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS™ logic level FET Rev.
03 — 23 July 2001 Product data 1.
Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).
2.
Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible.
3.
Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) mb mb mb Simplified outline Symbol drain (d) source (s) mounting base, connected to drain (d) 1 MBK106 d g 2 MBB076 s 3 MBK116 1 2 3 MBK112 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) SOT226 (I2-PAK) Philips Semiconductors BUK9506-55A; BUK9606-55A; BUK9E06-55A www.
DataSheet4U.
com 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.
5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ − − − − 5.
3 5.
5 4.
8 Max 55 154 300 175 6.
3 6.
7 5.
8 Unit V A W °C mΩ mΩ mΩ 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive...


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