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BUK9606-55B

nexperia
Part Number BUK9606-55B
Manufacturer nexperia
Description N-channel TrenchMOS FET
Published Jun 4, 2019
Detailed Description BUK9606-55B N-channel TrenchMOS FET Rev. 04 — 23 July 2009 Product data sheet 1. Product profile 1.1 General descript...
Datasheet PDF File BUK9606-55B PDF File

BUK9606-55B
BUK9606-55B

Overview
BUK9606-55B N-channel TrenchMOS FET Rev.
04 — 23 July 2009 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.
4 Quick reference data Table 1.
Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V ID drain current VGS = 5 V; Tmb = 25 °C; [1] - - 75 A see Figure 1 and 3 Ptot total power dissipation Tmb = 25 °C; see Figur...


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