BUK9606-55B
N-channel TrenchMOS FET
Rev.
04 — 23 July 2009
Product data sheet
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Product profile
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1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
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2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
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3 Applications
12 V and 24 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
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4 Qu...