PBSS4112PAN
120 V, 1 A
NPN/
NPN low VCEsat (BISS)
transistor
29 November 2012
Product data sheet
1.
Product profile
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1 General description
NPN/
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/
PNP complement: PBSS4112PANP.
PNP/
PNP complement: PBSS5112PAP.
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2 Features and benefits
• Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified
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3 Applications • Load switch...