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PBSS4112PANP

Part Number	PBSS4112PANP
Manufacturer	NXP
Description	NPN/NPN low VCEsat (BISS) transistor
Published	Oct 29, 2013
Detailed Description	PBSS4112PANP 29 November 2012 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. Product profile 1...
Datasheet	PBSS4112PANP PDF File

Overview

PBSS4112PANP 29 November 2012 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.
Product profile 1.
1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4112PAN.
PNP/PNP complement: PBSS5112PAP.
1.
2 Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 1.
3 Applications • Load switch • Battery...

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