| Part Number | 2N7002LT1G |
| Manufacturer | DCY |
| Title | Small Signal MOSFET |
| Description | WWW.DCY-CHINA.NET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ●FEATURES 1)We declare that the material of product compliant with ... |
| Features |
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMA... |
| File Size | 965.40KB |
| Datasheet |
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2N7002LT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current — Continuous TC = 25°C(1) Drain Current — Continuous TC = 100°C(1) Drain Current — Pulsed(2) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 ± 115 ± 75 ± 800 ± 20 ± 40 Unit Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(3) TA = 25°C Derate above 25°C Thermal.
2N7002LT1 : LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) VDSS VDGR ID ID IDM 60 60 ±ā115 ±ā75 ±ā800 Vdc Vdc mAdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS VGS VGSM ±ā20 Vdc ±ā40 Vpk Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate.
2N7002LT1 : 2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) VDSS VDGR ID ID IDM 60 60 ±ā115 ±ā75 ±ā800 Vdc Vdc mAdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS VGS VGSM ±ā20 ±ā40 Vdc Vpk Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate.