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2N7002LT1

ON Semiconductor
Part Number 2N7002LT1
Manufacturer ON Semiconductor
Description Small Signal MOSFET
Published Jul 7, 2019
Detailed Description 2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Val...
Datasheet PDF File 2N7002LT1 PDF File

2N7002LT1
2N7002LT1

Overview
2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.
) – Continuous TC = 100°C (Note 1.
) – Pulsed (Note 2.
) VDSS VDGR ID ID IDM 60 60 ±ā115 ±ā75 ±ā800 Vdc Vdc mAdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS VGS VGSM ±ā20 ±ā40 Vdc Vpk Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.
) TA = 25°C Derate above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.
) TA = 25°C Derate above 25°C RθJA PD 556 °C/W 300 mW mW/°C 2.
4 Thermal Resistance, Junction to Ambient Junction and Storage Temperature RθJA TJ, Tstg 417 –ā55 to +150 °C/W °C 1.
The Power Dissipation of the package may result in a lower continuous drain current.
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.
0%.
3.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
4.
Alumina = 0.
4 x 0.
3 x 0.
025 in 99.
5% alumina.
http://onsemi.
com 115 mAMPS 60 VOLTS RDS(on) = 7.
5 W N–Channel 3 1 2 3 1 2 SOT–23 CASE 318 STYLE 21 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 702 W 12 Gate Source 702 = Device Code W = Work Week ORDERING INFORMATION Device Package Shipping 2N7002LT1 2N7002LT3 SOT–23 3000 Tape & Reel SOT–23 10,000 Tape & Reel Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev.
4 1 Publication Order Number: 2N7002LT1/D 2N7002LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR ON CHAR...


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