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2N7002LT1

Part Number	2N7002LT1
Manufacturer	Motorola Inc
Description	TMOS FET Transistor
Published	Mar 22, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 ...
Datasheet	2N7002LT1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Drain Current — Continuous TC = 25°C(1) Drain Current — Continuous TC = 100°C(1) Drain Current — Pulsed(2) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 ± 115 ± 75 ± 800 ± 20 ± 40 Unit Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB) Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(3) TA = 25°C Derate above 25°C Thermal...

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