NX3008NBKS
30 V, 350 mA dual N-channel Trench MOSFET
5 November 2022
Product data sheet
1.
General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• Very fast switching • Low threshold voltage • Trench MOSFET technology • ESD protection up to 2 kV • AEC-Q101 qualified
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Per
transistor
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage...