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NX3008NBKW

NXP Semiconductors
Part Number NX3008NBKW
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description SO T3 NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1...
Datasheet PDF File NX3008NBKW PDF File

NX3008NBKW
NX3008NBKW


Overview
SO T3 NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev.
1 — 2 August 2011 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
23 1.
2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.
5 V; Tamb = 25 °C VGS = 4.
5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 350 1.
4 Unit V V mA Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G S D gate source drain G Simplified outline 3 Graphic symbol D 1 2 SOT323 (SC-70) S 017aaa255 3.
Ordering information Table 3.
Ordering information Package Name NX3008NBKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4.
Marking Table 4.
Marking codes Marking code[1] AA% Type number NX3008NBKW [1] % = placeholder for manufacturing site code NX3008NBKW All information provided in this document is subject to legal disclaimers.
© NXP B.
V.
2011.
All rights reserved.
Product data sheet Rev.
1 — 2 August 2011 2 of 16 NXP Semiconductors NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET 5.
Limiting values Table 5.
Symbol VDS VGS ID IDM Ptot Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation VGS = 4.
5 V; Tamb = 25 °C VGS = 4...


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