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NX3008NBK

nexperia
Part Number NX3008NBK
Manufacturer nexperia
Description N-channel MOSFET
Published Jun 4, 2019
Detailed Description NX3008NBK 30 V, 400 mA N-channel Trench MOSFET 5 November 2022 Product data sheet 1. General description N-channel enh...
Datasheet PDF File NX3008NBK PDF File

NX3008NBK
NX3008NBK

Overview
NX3008NBK 30 V, 400 mA N-channel Trench MOSFET 5 November 2022 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ESD protection up to 2 kV • AEC-Q101 qualified 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state VGS = 4.
5 V; ID = 350 mA; Tj = 25 °C resistance Min Typ Max Unit - - 30 V -8 - 8 V - - 400 mA - 1 1.
4 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Simplified outline 3 Graphic symbol D G 1 2 SOT23 S 017aaa255 6.
Ordering information Table 3.
Ordering information Type number Package Name NX3008NBK SOT23 Description plastic, surface-mounted package; 3 terminals; 1.
9 mm pitch; 2.
9 mm x 1.
3 mm x 1 mm body Version SOT23 7.
Marking Table 4.
Marking codes Type number NX3008NBK [1] % = placeholder for manufacturing site code Marking code[1] KS% NX3008NBK Product data sheet All information provided in this document is subject to legal disclaimers.
5 November 2022 © Nexperia B.
V.
2022.
All rights reserved 2 / 15 Nexperia NX3008NBK 30 V, 400 mA N-channel Trench MOSFET 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VDS drain-source voltage Tj = 25 °C -...


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