SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.
5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.
5V) G1 S2 3D +0.
22.
8 -0.
1 SOT-23-3 2.
9 +0.
2 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
2 +0.
21.
1 -0.
1 +0.
21.
6 -0.
1 0.
55 0.
4 Unit: mm 0.
15 +0.
02 -0.
02 1.
Gate 2.
Source 3.
Drain 0-0.
1 +0.
10.
68 -0.
1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃)*1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.
Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJ...

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