DatasheetsPDF.com

Si2301

SiPU
Part Number Si2301
Manufacturer SiPU
Description P-Channel MOSFET
Published Sep 15, 2019
Detailed Description Si2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged...
Datasheet PDF File Si2301 PDF File

Si2301
Si2301

Overview
Si2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -3.
6A 95@ VGS=-4.
5V 115 @ VGS=-2.
5V NOTE The Si2301 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit -20 ±12 -3.
6 IDM -11 IS -1.
25 PD 1.
25 TJ,TSTG -55 to 150 Unit V V A A A W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 /W 1 Si2301 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DAYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Condition Min Typ Max Unit BVDSS IDSS IGSS VGS=0V,ID=-250µA VDS=-16V,VGS=0V VGS=±10V,VDS=0V -20 1 ±100 V µA nA VGS(th) RDS(ON) FS VDS=VGS,ID=-250µA VGS=-4.
5V,ID=-2.
8A VGS=-2.
5V,ID=-2.
0A VGS=-5V,ID=-5A -0.
5 -0.
8 -1.
5 V 95 110 m 115 145 5S CISS COSS CRSS VDS=-10V,VGS=0V f=1.
0MHZ 586 pF 101 pF 59 pF tD(ON) tr tD(OFF) tf Q Qs Qd VDD=-10V ID=-2.
8A, VGEN=-4.
5V RL=10ohm RGEN=6ohm VDS=-10V,ID=-3A VGS=-4.
5V 6.
5 ns 32.
1 ns 58.
4 ns 48 ns 6 nC 1.
35 nC 1.
5 nC 2 Si2301 ELECTRICAL CHARACTERICS (TA=25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS=0V,IS=-1.
25A -0.
81 -1.
2 V Notes a.
Surface Mounted on...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)