isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071
· Collector-Emitter Saturation Voltage: VCE(sat) = 3.
0V(Min)@IC= 5A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.
They are particularly suited for line-operated switchmode applications such as switching
regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
M...