Part Number
|
SCT20N120 |
Manufacturer
|
STMicroelectronics |
Description
|
Silicon carbide Power MOSFET |
Published
|
Dec 4, 2019 |
Detailed Description
|
SCT20N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package
HiP247
...
|
Datasheet
|
SCT20N120
|
Overview
SCT20N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ.
, TJ = 150 °C) in an HiP247 package
HiP247
3 2
1
D(2, TAB)
Features
• Very tight variation of on-resistance vs.
temperature • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance
Applications
• Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance al...
Similar Datasheet