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SCT20N120AG

STMicroelectronics
Part Number SCT20N120AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Mar 1, 2023
Detailed Description SCT20N120AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247...
Datasheet PDF File SCT20N120AG PDF File

SCT20N120AG
SCT20N120AG

Overview
SCT20N120AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ.
, TJ=150 °C), in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very tight variation of on-resistance vs.
temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Switch mode power supplies G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good sw...


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