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SCT20N120

STMicroelectronics

Silicon carbide Power MOSFET

SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package HiP247 ...



SCT20N120

STMicroelectronics


Octopart Stock #: O-1411844

Findchips Stock #: 1411844-F

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Description
SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package HiP247 3 2 1 D(2, TAB) Features • Very tight variation of on-resistance vs. temperature • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120 Product summary Order code SCT20N120 Marking SCT20N120 Package HiP247 Packing Tube DS10360 - Rev 5 - September 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain curr...




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