Part Number
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S60N10M |
Manufacturer
|
SI-TECH |
Description
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N-CHANNEL POWER MOSFET |
Published
|
Feb 13, 2020 |
Detailed Description
|
SI-TECH SEMICONDUCTOR CO.,LTD S60N10M
N-Channel MOSFET
Features
60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V High Ruggednes...
|
Datasheet
|
S60N10M
|
Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S60N10M
N-Channel MOSFET
Features
60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol VDSS
ID IDM VGS EAS
PD TJ TSTG
Parameter Drain-Source Voltage(TC=25 ℃) ...
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