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S60N12R

SI-TECH
Part Number S60N12R
Manufacturer SI-TECH
Description N-Channel MOSFET
Published Sep 23, 2017
Detailed Description SI-TECH SEMICONDUCTOR CO.,LTD S60N12R N-Channel MOSFET Features  60V, 120A,Rds(on)(typ)=6.5mΩ @Vgs=10V  High Ruggedn...
Datasheet PDF File S60N12R PDF File

S60N12R
S60N12R

Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S60N12R N-Channel MOSFET Features  60V, 120A,Rds(on)(typ)=6.
5mΩ @Vgs=10V  High Ruggedness  Fast Switching  100% Avalanche Tested  Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings Symbol Param eter VDS S ID ID M V GS EAS PD TJ TS TG Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-S ource Voltage Single Pulsed A valanche Energy (Not e 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperat...


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