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S60N10M

SI-TECH
Part Number S60N10M
Manufacturer SI-TECH
Description N-CHANNEL POWER MOSFET
Published Feb 13, 2020
Detailed Description SI-TECH SEMICONDUCTOR CO.,LTD S60N10M N-Channel MOSFET Features  60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V  High Ruggednes...
Datasheet PDF File S60N10M PDF File

S60N10M
S60N10M

Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S60N10M N-Channel MOSFET Features  60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V  High Ruggedness  Fast Switching  100% Avalanche Tested  Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS PD TJ TSTG Parameter Drain-Source Voltage(TC=25 ℃) Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth c-s Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Value 60 100 71 400 ±25 400 114 0.
76 -55 to +175 -55 to +175 Max.
1.
31 0.
5 63 Units V A A A V mJ W W/℃ ℃ ℃ Units ℃/W ℃/W ℃/W Ver1.
6 -1- May.
2019 SI-TECH SEMICONDUCTOR CO.
,LTD S60N10M Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse Gate Threshold Voltage Drain-Source On-State Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=250uA VDS=55V, VGS=0V VGS=25V, VDS=0V VGS=-25V, VDS=0V VGS=VDS, ID=250uA VGS=10V...


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