MJD42C

MJD42 : MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value -100 -100 -5 -6 -10 -2 20 1.75 150 - 65 ~ 150 Units V V .

MJD42C : ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation .

MJD42C : SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves Monolithic Construction With Built?in Base ? Emitter Resistors Pb-Free Packages are Available +09.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 +01.50 .15 -0.15 0.80+0.1 -0.1 0.127 max +0.50 0.15 -0.15 +1.50 0.28 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector current (pulse) Base current Total Device Dissipation FR-5 Board @TA = 25 Derate above 25 Total Device Dissipation .

MJD42C : TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features MJD41C 。 Complement to MJD41C.  / Applications 。 Medium power linear switching applications.  / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 MJD42C Rev.E May.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC .

MJD42C : Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP42C. z Straight Lead. APPLICATIONS z General purpose amplifier. z Low speed switching applications. Production specification MJD42C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous ICP Collector Current -Peak IB Base Current -6 A -10 A -2 A PC Collector Power Dissipation 1.5 W RθJC Thermal Resistance,Junciton to Case.

MJD42C : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically similar to popular TIP41 and TIP42 Series • Monolithic Construction With Built-in Base-Emitter Resistors Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current.

MJD42C : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD42C TRANSISTOR (PNP) FEATURES z Designed for general purpose amplifier and low speed switching applications. z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) z Straight Lead Version in Plastic Sleeves (“–1” Suffix) z Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) z Electrically Similar to Popular TIP41 and TIP42 Series z Monolithic Construction With Built–in Base–Emitter Resistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect.

MJD42C : MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value -100 -100 -5 -6 -10 -2 20 1.75 150 - 65 ~ 150 Units V V .

MJD42C : MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Electrically Similar to Popular TIP41 and TIP42 Series • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−.

MJD42C : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD41C/D Complementary Power Transistors • • • • • MJD41C* PNP MJD42C* *Motorola Preferred Device NPN DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Monolithic Construction With Built–in Base–Emitter Resistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ.

MJD42C : Green MJD42C 100V PNP MEDIUM POWER TRANSISTOR IN TO252 Features  BVCEO -100V  IC = -6A Continuous Collector Current  ICM = -10A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary NPN Type: MJD41C  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  An automotive-compliant part is available under separate datasheet (MJD42CQ) Mechanical Data  Package: TO252  Package Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  W.

MJD42C1G : ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5 V(Max)@ IC = -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current -2 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.75 Tj Junction Tmperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ .

MJD42_MJD42C : MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I.PACK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value -100 -100 -5 -6 -10 -2 20 1.75 150 - 65 ~ 150 Units V V.