DatasheetsPDF.com

MJD42

Fairchild
Part Number MJD42
Manufacturer Fairchild
Description General Purpose Amplifier
Published May 7, 2005
Detailed Description MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (N...
Datasheet PDF File MJD42 PDF File

MJD42
MJD42

Overview
MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.
Base 1 I-PAK 3.
Emitter 2.
Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value -100 -100 -5 -6 -10 -2 20 1.
75 150 - 65 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES IEBO hFE VCE(sat) VBE(on) fT Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = - 30mA, IB = 0 VCE = -60V, IB = 0 VCE = -100V, VBE = 0 VBE = -5V, IC = 0 VCE = -4V, IC = -0.
3A VCE = -4V, IC = -3A IC = -6A, IB = -600mA VCE = -6A, IC = -4A VCE = -10V, IC = -500mA 3 30 15 Min.
-100 Max.
-50 -10 -0.
5 75 -1.
5 -2 V V MHz Units V µA µA mA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev.
A2, June 2001 MJD42C Typical Characteristics 1000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 VCE = -2V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 V BE(sat) 10 -0.
1 VCE(sat) 1 -0.
01 -0.
1 -1 -10 -0.
01 -0.
01 -0.
1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1.
DC current Gain Figure 2.
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1000 Cob[pF], CAPACITANCE tR, tD [µs], TURN ON TIME V CC = -30V IC = 10.
IB 1 100 tR 0.
1 10 tD VBE(off)=-5V 1 -0.
1 0.
01 -0.
01 -1 -10 -100 -0.
1 -1 -10 VCB...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)