NXP Semiconductors Technical Data
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W Power gain — 23.
9 dB Drain efficiency — 62%
Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power
Features Characterized with series equivalent large--signal impedance parameters Qualified up to a maximum of 50 VDD operation Integrated ESD protection 225C capable plastic package
D...