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MRF6V2010NR1

Freescale Semiconductor
Part Number MRF6V2010NR1
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Jul 6, 2007
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N ...
Datasheet PDF File MRF6V2010NR1 PDF File

MRF6V2010NR1
MRF6V2010NR1

Overview
Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev.
1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain — 23.
9 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • TO - 270 - 2 in Tape and Reel.
R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO - 272 - 2 in Tape and Reel.
R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz, 10 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6V2010NR1 CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6V2010NBR1 www.
DataSheet4U.
com Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.
5, +110 - 0.
5, +10 - 65 to +150 200 Unit Vdc Vdc °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Symbol RθJC Value (1,2) 3.
0 Unit °C/W 1.
MTTF calculator available at http://www.
freescale.
com/rf.
Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
2.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.
freescale.
com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc.
, 2007.
All rights reserved.
MRF6V2010NR1 MRF6V2010NBR1 1 RF Device Data Freescale Semiconductor Table 3.
ESD Prot...


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