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MRF6V2010N

Part Number	MRF6V2010N
Manufacturer	NXP
Description	RF Power FET
Published	Jul 10, 2020
Detailed Description	NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designe...
Datasheet	MRF6V2010N PDF File

Overview

NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
 Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.
9 dB Drain efficiency — 62%  Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power Features  Characterized with series equivalent large--signal impedance parameters  Qualified up to a maximum of 50 VDD operation  Integrated ESD protection  225C capable plastic package Document Number: MRF6V2010N Rev.
6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs TO--270--2 PLASTIC MRF6V2010N TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN Gate 2 1 Drain (Top View) Note: Exposed backside of the package is the source terminal for the transistor.
Figure 1.
Pin Connections  2007–2008, 2010, 2016 NXP B.
V.
RF Device Data NXP Semiconductors MRF6V2010N MRF6V2010NB MRF6V2010GN 1 Table 1.
Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2.
Thermal Characteristics Characteristic VDSS VGS Tstg TC TJ Symbol --0.
5, +110 --0.
5, +10 -- 65 to +150 150 225 Value (2,3) Vdc Vdc C C C Unit Thermal Resistance, Junction to Case Case Temperature 81C, 10 W CW RJC 3.
0 C/W Table 3.
ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4.
Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5.
Electrical Characteristics (TA = 25...

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