isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
R6020ENX
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.
196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
60
PD
Total Dissipation @TC=25℃
68
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal r...