DatasheetsPDF.com

R6020ENZ1

ROHM
Part Number R6020ENZ1
Manufacturer ROHM
Description Power MOSFET
Published Mar 1, 2021
Detailed Description R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.) 600V 0.196W TO-247 ID 20A PD 120W ...
Datasheet PDF File R6020ENZ1 PDF File

R6020ENZ1
R6020ENZ1

Overview
R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.
) 600V 0.
196W TO-247 ID 20A PD 120W (1) (2) (3) lFeatures 1) Low on-resistance.
lInner circuit 2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
e 4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate (2) Drain (3) Source *1 BODY DIODE t 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - le lApplication Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 450 Taping code C9 Marking R6020ENZ1 o lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V s Continuous drain current Tc = 25°C Tc = 100°C ID *1 20 A ID *1 10.
9 A Pulsed drain current ID,pulse *2 60 A b Gate - Source voltage VGSS 20 V Avalanche energy, single pulse EAS *3 418 mJ Avalanche energy, repetitive EAR *3 0.
63 mJ O Avalanche current, repetitive IAR 3.
4 A Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C Reverse diode dv/dt dv/dt *4 15 V/ns www.
rohm.
com © 2014 ROHM Co.
, Ltd.
All rights reserved.
1/12 2014.
03 - Rev.
B R6020ENZ1 lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V Tj = 25°C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient e Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Unit Min.
Typ.
Max.
- - 1.
04 °C/W - - 30 °C/W - - 265 °C t lElectrical characteristics (Ta = 25°C) le Parameter Symbol Conditions Values Unit Min.
Typ.
Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V o Zero gate voltage drain current s Gate - Source leakage current Gate threshold voltage Static drain - source b on - state re...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)