DatasheetsPDF.com

R6020ENX

INCHANGE
Part Number R6020ENX
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.19...
Datasheet PDF File R6020ENX PDF File

R6020ENX
R6020ENX

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.
196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
84 UNIT V V A A W ℃ ℃ UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)