INCHANGE Semiconductor
isc Silicon
NPN Darlingtion Power
Transistor
2N6056
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·Low Collector-Emitter Saturation Voltage-
: VCE (sat)= 2.
0V(Max.
)@IC= 4.
0A ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 80V(Min) ·Complement to type 2N6054 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
8
A
ICM
Collect...