isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1952
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.
3(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC5103 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
10
W
150
℃
Tstg
Storage Temperature Range
-5...