isc Silicon
PNP Power
Transistor
2SB1135
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= -0.
4V(Max.
)@ IC= -4A ·Complement to Type 2SD1668 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for relay drivers, high-speed inverters, and other
general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25...