isc Silicon
PNP Darlington Power
Transistor
INCHANGE Semiconductor
2SB1253
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2.
5V(Max.
)@IC= -5A ·Complement to Type 2SD1893 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=2...