INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
2SB1273
DESCRIPTION ·High Reliability ·Low Collector Saturation Voltage
: VCE(sat)= -1.
0V(Max)@IC= -2A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
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