isc Silicon
NPN Pow
Transistor
DESCRIPTION ·Silicon
NPN epitaxial type ·Low saturation voltage ·Complementary to 2SA1020 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
50
V
VCEO Collector-Emitter Voltage
50
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
2
A
0.
9
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2655
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