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2SC2611

Hitachi Semiconductor
Part Number 2SC2611
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitt...
Datasheet PDF File 2SC2611 PDF File

2SC2611
2SC2611

Overview
2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1.
Emitter 2.
Collector 3.
Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 1.
25 150 –55 to +150 Unit V V V mA W °C °C 2SC2611 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.
0 200 1.
5 — 4.
0 V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.
5 Collector power dissipation Pc (W) 1.
0 Collector Current IC (mA) Typical Output Characteristics 16 14 12 10 8 0.
4 6 4 0.
2 2 µA IB = 0 0.
8 1.
0 0.
6 0.
5 0 50 100 Ambient Temperature TC (°C) 150 0 0.
4 0.
8 1.
2 1.
6 2.
0 Collector to emitter Voltage VCE (V) 2 2SC2611 DC Current Transfer Ratio vs.
Collector Current 100 DC current transfer ratio hFE Typical Transfer Characteristics 100 Collector Current IC (mA) 50 VCE = 20 V 20 10 5 80 Ta = C 75° 25 –25 VCE = 20 V Pulse 60 40 20 2 1 0 0.
2 0.
4 0.
6 0.
8 1.
0 Base to emitter voltage VBE (V) 0 1 2 5 10 20 50 Collector current IC (mA) 100 Collector to Emitter Saturation Voltage vs.
Collector Current Collector to emitter saturation voltage VCE (sat) (V) 10 5 IC = 10 IB Pulse Gain bandwidth product fT (MHz) 100 Gain Bandwidth Product vs.
Collector Current 80 VCE = 20 V ...


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