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2SC2610

Hitachi Semiconductor
Part Number 2SC2610
Manufacturer Hitachi Semiconductor
Description Silicon NPN Triple Diffused Transistor
Published Mar 22, 2005
Detailed Description 2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1. Emitt...
Datasheet PDF File 2SC2610 PDF File

2SC2610
2SC2610

Overview
2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1.
Emitter 2.
Collector 3.
Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 800 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.
0 200 1.
5 — 4.
0 V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob 2 2SC2610 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 800 Collector Current IC (mA) 1.
0 Typical Output Characteristics 16 14 12 10 8 0.
4 6 4 0.
2 2 µA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 200 0 0.
4 0.
8 1.
2 1.
6 2.
0 Collector to Emitter Voltage VCE (V) 0.
8 600 0.
6 400 200 Typical Transfer Characteristics 100 Collector Current IC (mA) 50 20 10 5 DC Current Transfer Ratio hFE VCE = 20 V 100 DC Current Transfer Ratio vs.
Collector Current VCE = 20 V Pulse 80 Ta 60 = 25 –25 C 75° 40 2 1 0 0.
2 0.
4 0.
6 0.
8 1.
0 Base to Emitter Voltage VBE (V) 20 0 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SC2610 Collector to Emitter Saturation Voltage vs.
Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 10 Gain Bandwidth Product fT (MHz) 5 2 1.
0 IC = 10 IB Pulse 5°C =7 Gain Bandwidth Product vs.
Collector Cu...


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