2SC3420

2SC3420 : 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • • • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCES VCEO V.

2SC3420 : ·With TO-126 package ·High DC current gain ·Low saturation voltage ·High collector power dissipation APPLICATIONS ·Storobo flash applications ·Medium power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55 +150 CONDITIONS Open emitter Open base Open collector VALUE 50 20 8 5 8 1 1.5 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U..

2SC3420 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3420 TRANSISTOR (NPN) TO – 126C FEATURES z High DC Current Gain z Low Saturation Voltage z High Collector Power Dissipation 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 50 20 8 5 1.5 83 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol.

2SC3420 : TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features ,, 。 High DC current gain, low saturation voltage,high collector power dissipation. / Applications ,。 Storobo flash applications, medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range Y 140～240 GR 200～400 BL 300～600 http://www.fsbrec.com 1/6 2SC3420 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Base.

2SC3420 : NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURES z High DC Current Gain: hFE=140~600(VCE=2V,IC=0.5A) Pb Lead-free hFE=70(Min.) (VCE=2V,IC=4A) z Low Saturation Voltage:VCE(sat)=1.0V(Max.)(IC=4A,IB=0.1A) Production specification 2SC3420 APPLICATIONS z STOROBO FLASH APPLICATION z MEDIUM POWER AMPLIFIER APPLICATIONS. SOT-89 ORDERING INFORMATION Type No. Marking 2SC3420 3420 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage Collector Current DC Pulse IB Base Current PC Power Dissipation Tj Junction Temperature Tstg Storage Temperature V.

2SC3421 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications 2SC3421 Unit: mm • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 120 120 5 1 100 1.5 10 150 −55 to 150 V V V A mA W °C °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of.

2SC3421 : ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.1 A 10 W 1.5 150 ℃ Tstg Storage T.

2SC3421 : TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features VCEO， 60-80W ， 2SA1358 。 High VCEO, suitable for driver of 60 to 80 watts audio amplifier, complementary to 2SA1358. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 80～160 Y 120～240 http://www.fsbrec.com 1/6 2SC3421 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current – Continuous Collector Power D.

2SC3421 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3421 TRANSISTOR (NPN) FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage TO- 126C 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS* Ta=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipation (Ta = 25 ℃) Collector Dissipation (Tc = 25 ℃) Junction Temperature Storage Temperature Range Value 120 120 5 1 0.1 1.25 10 150 -55-150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ u.

2SC3422 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching 2SC3422 Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 40 V 40 V 5V 3A 1A 1.5 W 10 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A Note1: Using continuously under heavy .

2SC3422 : ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1359 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.5 150 ℃ Ts.

2SC3422 : TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features 5W ，hFE ， 2SA1359 。 Suitable for output stage of 5 watts car radio and car stereo, good linearity of hFE complementary to 2SA1359. / Applications 。 Audio frequency power amplifier, low speed switching. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 80～160 Y 120～240 GR 200～400 http://www.fsbrec.com 1/6 2SC3422 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Curr.

2SC3423 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications 2SC3423 Unit: mm • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 5 50 5 1.2 5 150 −55 to 150 V V V mA mA W °C °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g..

2SC3423 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Complement to Type 2SA1360 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3423 isc website：www.iscsemi.com 1 i.

2SC3423 : ·With TO-126 package ·Complement to type 2SA1360 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55 +150 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 50 5 1.2 W UNIT V V V mA mA SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 un.

2SC3424 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V (Min) ·Complement to Type 2SA1361 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 50 mA ICP Collector Current-Peak 100 mA IB Base Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 mA 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3424 isc website：www.iscsemi.com 1 isc .