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2SD1763

Part Number 2SD1763
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Good Linearity of hFE ·Complement...
Features O Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0...
Published Sep 5, 2020
Datasheet 2SD1763 PDF File




Features
O Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB...






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