isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BD337
DESCRIPTION ·High DC Current Gain ·Complement to type BD338 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·
NPN epitaxial base
transistors in monolithic Darlington
circuit for audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IBM PC TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
120
V
120
V
6
V
6
A
0.
15
A
...