INCHANGE Semiconductor
isc Silicon
PNP Darlington Power
Transistors
BDT62F
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min) ·Complement to Type BDT63F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
...