INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
BDT63F/A/B/C
DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63F
60
VCER
Collector-Emitter Voltage
BDT63AF
80
BDT63BF
100
V
BDT63CF
120
BDT63F
60
VCEO
Collector-Emitter Voltage
BDT63AF
80
BDT63BF
100
V
BDT63CF
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Curre...