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BDT63BF

INCHANGE
Part Number BDT63BF
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 7, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ...
Datasheet PDF File BDT63BF PDF File

BDT63BF
BDT63BF

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·Complement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63F 60 VCER Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 BDT63F 60 VCEO Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
25 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
39 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63F V(BR)CEO Collector-Emitter Breakdown Voltage BDT63AF BDT63BF IC= 30mA ;IB=0 BDT63CF VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V VECF ICEO ICBO IEBO C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IF= 3A VCE= 1/2VCEOmax; IB= 0 VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 3A ; VCE= 3V hFE-2 DC Current Gain IC= 10A ; VCE= 3V COB Output Capacitance Switching times IE= 0 ; VCB= 10V; ftest= 1MHz ton Turn-On Time toff Turn-Off Time IC=...


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