DatasheetsPDF.com

BDT63B

Part Number	BDT63B
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Dec 6, 2012
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min...
Datasheet	BDT63B PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
25 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
39 ℃/W BDT63/A/B/C isc website：www.
iscsemi.
com ...

Similar Datasheet

BDT60 PNP Transistor - Power Innovations Limited
BDT60 PNP SILICON POWER DARLINGTONS - New Jersey Semi-Conductor
BDT60 Silicon PNP Power Transistor - Inchange Semiconductor
BDT60A PNP Transistor - Power Innovations Limited
BDT60A PNP SILICON POWER DARLINGTONS - New Jersey Semi-Conductor
BDT60A Silicon PNP Power Transistor - Inchange Semiconductor
BDT60AF PNP Transistor - INCHANGE
BDT60B PNP Transistor - Power Innovations Limited
BDT60B PNP SILICON POWER DARLINGTONS - New Jersey Semi-Conductor
BDT60B Silicon PNP Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)