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BDY38

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25...

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