isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.
5V(Max.
) @ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching
regulators applications.
BSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=90℃
TJ
Junction Temperature
15
A
40
W
150
℃
Tstg
Storage Tempera...