isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.
6V (Max.
) @IC= 6A ·High Switching Speed ·High DC Current Gain-
: hFE= 20(Min.
) @IC= 6A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
4
...