Silicon
NPN Power
Transistor
MJ21194
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
4 V(Max)@ IC = 8A ·Complement to the
PNP MJ21193 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio output, disk head positioners
and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
IB
Base Current
5
A
PD
Total Power Dissipation@TC=25℃
...