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MJ21194

Part Number	MJ21194
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A...
Datasheet	MJ21194 PDF File

Overview

Silicon NPN Power Transistor MJ21194 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
4 V(Max)@ IC = 8A ·Complement to the PNP MJ21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio output, disk head positioners and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current 5 A PD Total Power Dissipation@TC=25℃ ...

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